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Flip Chip Bonding of 68 x 68 MWIR LED Arrays

Identifieur interne : 005404 ( Main/Repository ); précédent : 005403; suivant : 005405

Flip Chip Bonding of 68 x 68 MWIR LED Arrays

Auteurs : RBID : Pascal:09-0183427

Descripteurs français

Pascal (Inist)
- Connexion par billes, Réseau diode, Optimisation, Rayonnement IR moyen, Technologie MOS complémentaire, Excitateur, Cathode, Anode, Contact bosse, Puce à bosses, Diode électroluminescente, Caractéristique courant tension, Résistance contact, Caractéristique électrique, Caractéristique optique, Assemblage circuit intégré, Dispositif optoélectronique.

English descriptors

KwdEn :
- Anode, Cathode, Complementary MOS technology, Contact resistance, Diode array, Driver, Electrical characteristic, Flip chip bonding, Flip-chip, Integrated circuit bonding, Light emitting diode, Mid infrared radiation, Optical characteristic, Optimization, Optoelectronic device, Solder bump, Voltage current curve.

Abstract

-The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68 x 68 mid wave infrared (MWIR) LED array was hybridized onto Si-CMOS driver array with same number of pixels. Each pixel has two indium bumps, one for cathode and another for anode. Both LED array and CMOS drivers have 15-μm-square Indium bump contact pads. We used Karl Suss FC150 flip chip machine for bonding of CMOS driver array onto LED array. From the LED current-voltage characteristics, it is concluded that the optimized flip chip bonding process results in uniform contact and very low contact resistance. Both electrical and optical characteristics of LED array after flip chip bonding are presented.

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Le document en format XML

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<term>Driver</term>
<term>Electrical characteristic</term>
<term>Flip chip bonding</term>
<term>Flip-chip</term>
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<term>Réseau diode</term>
<term>Optimisation</term>
<term>Rayonnement IR moyen</term>
<term>Technologie MOS complémentaire</term>
<term>Excitateur</term>
<term>Cathode</term>
<term>Anode</term>
<term>Contact bosse</term>
<term>Puce à bosses</term>
<term>Diode électroluminescente</term>
<term>Caractéristique courant tension</term>
<term>Résistance contact</term>
<term>Caractéristique électrique</term>
<term>Caractéristique optique</term>
<term>Assemblage circuit intégré</term>
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<front><div type="abstract" xml:lang="en">-The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68 x 68 mid wave infrared (MWIR) LED array was hybridized onto Si-CMOS driver array with same number of pixels. Each pixel has two indium bumps, one for cathode and another for anode. Both LED array and CMOS drivers have 15-μm-square Indium bump contact pads. We used Karl Suss FC150 flip chip machine for bonding of CMOS driver array onto LED array. From the LED current-voltage characteristics, it is concluded that the optimized flip chip bonding process results in uniform contact and very low contact resistance. Both electrical and optical characteristics of LED array after flip chip bonding are presented.</div>
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Flip Chip Bonding of 68 x 68 MWIR LED Arrays

Flip Chip Bonding of 68 x 68 MWIR LED Arrays

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Abstract

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